The invention discloses a method for manufacturing a complementary metal oxide semiconductor ( CMOS ) transistor.

本发明公开了一种互补式金属氧化物半导体 ( CMOS ) 晶体管的制作方法.

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The present invention reveals a method for producing straining silicon complementary metal oxide semiconductor transistor.

本发明揭示了一种制作应变硅互补金属氧化物半导体晶体管的方法.

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FPGAs rely on the ubiquitous transistor - based technology called complementary metal oxide semiconductor ( CMOS ).

FPGA使用的材料是互补式金属氧化物半导体 ( CMOS ) 技术,这是种随处可见的电晶体技术.

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