We fabricated tilted buried stripe semiconductor optical amplifier by tensile strained InGaAs bulk active region.
采用张应变InGaAs体材料作为有源区,制作了倾斜的掩埋条形波导结构的半导体光放大器.
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The base comprises at least one active region which comprises at least one circuit.
前述基底包括至少一有源区域,其中该有源区域包括至少一电路.
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