Higher sinter temperature is in favor of the electrical conductivity go against Seebeck coefficient top - type materials.

对于p型 材料,烧结温度的提高有利于材料电导率的提高,不利于材料Seebeck系数的提高.

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The available methods of Seebeck coefficient of micro - scale material with MEMS structure were reviewed.

综述了微观尺度下利用MEMS结构测量硅材料塞贝克系数的已有工作.

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The CoSb 3 compounds exhib - ite n - type conduction , their Seebeck coefficient enhanced with the decreasing Sb particle size.

Sb粉末粒度的细化使Seebeck系数绝对值提高,也使化合物的热导率显著下降.

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The Seebeck coefficient measurement analysis indicated that Bi 2 - xTe 3 + x film have N - type semiconductor characteristic.

温差电性能测试分析表明,Bi_(2-x)Te_( 3+x )薄膜材料具有半导体特性,塞贝克系数不随温度变化.

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