A brief introduction to CBE comparing with MBE and MOCVD is presented in this paper.

本文主要通过与MBE和MOCVD的对比,对CBE作了简单的介绍.

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The membrane formed inside the porous of support by MOCVD process is resistant to hydrogen embrittlement.

由金属有机气相沈积法(MOCVD)在载体孔内沈积钯膜有助于防止氢的脆化作用.

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Recent advances in heteroepitaxial growth of high quality GaN films by MOCVD and HVPE is reviewed.

介绍了采用MOCVD或HVPE技术高质量异质外延生长GaN薄膜的发展状况.

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Metal Organic Chemical Vapor Deposition ( MOCVD ) is a key technology in growing thin - films.

金属有机化学气相沉积 ( OCVD ) 一门制备薄膜材料的关键技术.

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