The PVS spectra for GaAs 、 InP 、 InGaAs 、 InGaAsP etc. are reported in this paper.

本文介绍了InP、InGaAs、InGaP、InGaAsP等 的光压港(PVS).

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We fabricated tilted buried stripe semiconductor optical amplifier by tensile strained InGaAs bulk active region.

采用张应变InGaAs体材料作为有源区,制作了倾斜的掩埋条形波导结构的半导体光放大器.

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