In this model, the drain current, floating body potential and threshold.

在本模型还分析了浮体电势、阈值电压与温度的变化关系.

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This technology is using current buoyancy change, floating body to control drain switch of passageway.

该技术利用液流浮力变化驱动浮体升降来控制排水通道的开闭.

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A method is presented to generate the mesh for wetted surface of floating body.

给出了一种浮体湿表面网格生成方法.

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This method can suppress floating body effect of SOI MOSFET more effectively compared with other methods.

提出了一种新的部分耗尽SOI体 接触技术,与其它体接触技术相比,该方法可以有效抑制SOI器件的浮体效应.

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