Results show that HfO 2 gate dielectric hold good electrical characteristics.

实验结果显示:HfO2 栅介质电容具有良好的C-V 特性,较低的漏电流和较高的击穿电压.

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Intel is known for aggressive scaling, especially in the gate dielectric.

Intel一向在尺寸缩小方面是很激进的, 特别是栅介电层方面.

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But thinning of oxynitride , or SiON , gate dielectric is at the end of the road.

不过继续缩小 氮氧化硅 栅介电层厚度的道路仍然走到了尽头.

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However, the widespread adoption of channel strain engineering postponed gate dielectric replacement by a few generations.

不过沟道应力技术的引入使栅介电材料的替换推迟了若干代.

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